Physicists and chemists work to improve digital memory technology




Researchers are studying graphene and ammonia to develop high-speed, high-capacity random access memory. The team engineered and tested improvements in the performance of a memory structure known as a ferroelectric tunnel junction.

Fuente : http://feeds.sciencedaily.com/~r/sciencedaily/~3/8...

Lunes, 24 de Noviembre 2014
Jueves, 1 de Enero 1970
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