Graphene-based field-effect transistor with semiconducting nature opens up practical use in electronics

Scientists have announced a method for the mass production of boron/nitrogen co-doped graphene nanoplatelets, which led to the fabrication of a graphene-based field-effect transistor (FET) with semiconducting nature. This opens up opportunities for practical use in electronic devices.

Fuente : http://feeds.sciencedaily.com/~r/sciencedaily/~3/k...